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XPN12006NC,L1XHQ
Toshiba Semiconductor and Storage
Product No:
XPN12006NC,L1XHQ
Manufacturer:
Package:
8-TSON Advance-WF (3.1x3.1)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 60V 20A 8TSON
Quantity:
In Stock : 10000
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.121
10
0.9196
100
0.71535
500
0.606309
1000
0.493905
2000
0.464949
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 200µA |
| Base Product Number | XPN12006 |
| Operating Temperature | -55°C ~ 175°C |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| Power Dissipation (Max) | 65W (Tc) |
| Supplier Device Package | 8-TSON Advance-WF (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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