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VS-3C04ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C04ET07T-M3

Package:

TO-220AC

Batch:

-

Datasheet:

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

In Stock : 1983

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.223

  • 10

    1.84775

  • 100

    1.4706

  • 500

    1.244367

  • 1000

    1.05583

  • 2000

    1.003048

  • 5000

    0.965333

  • 10000

    0.933375

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Product Information

Parameter Info
User Guide
Mfr Vishay General Semiconductor - Diodes Division
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Capacitance @ Vr, F 175pF @ 1V, 1MHz
Supplier Device Package TO-220AC
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 25 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 4 A