TPN1R603PL,L1Q
Toshiba Semiconductor and Storage
Product No:
TPN1R603PL,L1Q
Manufacturer:
Package:
8-TSON Advance (3.1x3.1)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 30V 80A 8TSON
Quantity:
In Stock : 55595
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.8075
10
0.6631
100
0.51585
500
0.437228
1000
0.356164
2000
0.335293
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 300µA |
| Base Product Number | TPN1R603 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
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