TPN1200APL,L1Q
Toshiba Semiconductor and Storage
Product No:
TPN1200APL,L1Q
Manufacturer:
Package:
8-TSON Advance (3.1x3.1)
Batch:
-
Datasheet:
-
Description:
PB-F POWER MOSFET TRANSISTOR TSO
Quantity:
In Stock : 1811
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.779
10
0.67355
100
0.466355
500
0.389633
1000
0.331607
2000
0.295336
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 630mW (Ta), 104W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1855 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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