TK4A80E,S4X
Toshiba Semiconductor and Storage
Product No:
TK4A80E,S4X
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
PB-FPOWERMOSFETTRANSISTORTO-220S
Quantity:
In Stock : 50
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.121
10
0.9196
100
0.71535
500
0.606309
1000
0.493905
2000
0.464949
5000
0.442814
10000
0.42237
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 400µA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2A, 10V |
| Power Dissipation (Max) | 35W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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