TK170V65Z,LQ

Toshiba Semiconductor and Storage

Product No:

TK170V65Z,LQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 18A 5DFN

Quantity:

In Stock : 2450

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    3.3535

  • 10

    2.8177

  • 100

    2.27981

  • 500

    2.026464

  • 1000

    1.735156

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 4V @ 730µA
Base Product Number TK170V65
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 170mOhm @ 9A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package 4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1635 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)