TK16E60W,S1VX

Toshiba Semiconductor and Storage

Product No:

TK16E60W,S1VX

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 15.8A TO220

Quantity:

In Stock : 46

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.6125

  • 10

    2.3465

  • 100

    1.88632

  • 500

    1.54983

  • 1000

    1.284144

  • 2000

    1.195584

  • 5000

    1.151305

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 790µA
Base Product Number TK16E60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Power Dissipation (Max) 130W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)