TK12A80W,S4X

Toshiba Semiconductor and Storage

Product No:

TK12A80W,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 11.5A TO220SIS

Quantity:

In Stock : 40

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.85

  • 10

    2.39115

  • 100

    1.93439

  • 500

    1.719424

  • 1000

    1.472253

  • 2000

    1.386288

  • 5000

    1.33

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 570µA
Base Product Number TK12A80
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 450mOhm @ 5.8A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)