Toshiba Semiconductor and Storage
Product No:
SSM3J66MFV,L3XHF
Manufacturer:
Package:
VESM
Batch:
-
Datasheet:
-
Description:
AUTO AEC-Q SS MOS P-CH LOW VOLTA
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.361
10
0.2527
100
0.127585
500
0.104101
1000
0.077235
2000
0.06498
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| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +6V, -8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 800mA, 4.5V |
| Power Dissipation (Max) | 150mW (Ta) |
| Supplier Device Package | VESM |
| Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |