SQJA12EP-T1_GE3
Vishay Siliconix
Product No:
SQJA12EP-T1_GE3
Manufacturer:
Package:
-
Batch:
-
Datasheet:
-
Description:
N-CHANNEL 100-V (D-S) 175C MOSFE
Quantity:
In Stock : 2990
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.7195
10
1.4269
100
1.135725
500
0.960982
1000
0.815385
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | - |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 125°C |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 10A, 10V |
| Power Dissipation (Max) | - |
| Gate Charge (Qg) (Max) @ Vgs | 49.1 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3635 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | - |
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