SQD10N30-330H_4GE3
Vishay Siliconix
Product No:
SQD10N30-330H_4GE3
Manufacturer:
Package:
TO-252AA
Batch:
-
Datasheet:
Description:
N-CHANNEL 300-V (D-S) 175C MOSFE
Quantity:
In Stock : 3258
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.501
10
1.2312
100
0.957505
500
0.811604
1000
0.661134
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 14A, 10V |
| Power Dissipation (Max) | 107W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 300 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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