SISS60DN-T1-GE3
Vishay Siliconix
Product No:
SISS60DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Batch:
-
Datasheet:
Description:
MOSFET N-CH 30V 50.1/181.8A PPAK
Quantity:
In Stock : 6000
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.3775
10
1.1267
100
0.87647
500
0.742938
1000
0.605207
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Body) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8S |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SISS60 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.31mOhm @ 20A, 10V |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Gate Charge (Qg) (Max) @ Vgs | 85.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3960 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50.1A (Ta), 181.8A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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