SI4931DY-T1-GE3
Vishay Siliconix
Product No:
SI4931DY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET 2P-CH 12V 6.7A 8SOIC
Quantity:
In Stock : 10361
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.121
10
1.0032
100
0.782135
500
0.646095
1000
0.510074
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.1W |
| Configuration | 2 P-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 350µA |
| Base Product Number | SI4931 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.9A, 4.5V |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | 6.7A |
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