SI3460BDV-T1-GE3
Vishay Siliconix
Product No:
SI3460BDV-T1-GE3
Manufacturer:
Package:
6-TSOP
Batch:
-
Datasheet:
Description:
MOSFET N-CH 20V 8A 6TSOP
Quantity:
In Stock : 3000
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.8265
10
0.72865
100
0.558315
500
0.44137
1000
0.353096
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Base Product Number | SI3460 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.1A, 4.5V |
| Power Dissipation (Max) | 2W (Ta), 3.5W (Tc) |
| Supplier Device Package | 6-TSOP |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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