R6507ENXC7G
Rohm Semiconductor
Product No:
R6507ENXC7G
Manufacturer:
Package:
TO-220FM
Batch:
-
Datasheet:
-
Description:
650V 7A TO-220FM, LOW-NOISE POWE
Quantity:
In Stock : 998
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.679
10
2.2287
100
1.773745
500
1.500848
1000
1.273446
2000
1.209778
5000
1.164292
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Product Information
Parameter Info
User Guide
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Base Product Number | R6507 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 665mOhm @ 2.4A, 10V |
| Power Dissipation (Max) | 46W (Tc) |
| Supplier Device Package | TO-220FM |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
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30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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