MSCSM120HRM311AG
Microchip Technology
Product No:
MSCSM120HRM311AG
Manufacturer:
Package:
-
Batch:
-
Datasheet:
Description:
PM-MOSFET-SIC- SP1F
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Mfr | Microchip Technology |
| Series | - |
| Package | Bulk |
| Technology | Silicon Carbide (SiC) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 395W (Tc), 365W (Tc) |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 3mA, 2.4V @ 4mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 232nC @ 20V, 215nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV), 700V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 1000V, 4500pF @ 700V |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc), 124A (Tc) |
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