IXTQ200N10T
IXYS
Product No:
IXTQ200N10T
Manufacturer:
Package:
TO-3P
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 200A TO3P
Quantity:
In Stock : 14
Minimum: 1 Multiples: 1
Qty
Unit Price
1
6.8305
10
6.17405
100
5.111475
500
4.450959
1000
3.876646
2000
3.733072
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Product Information
Parameter Info
User Guide
| Mfr | IXYS |
| Series | Trench |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Base Product Number | IXTQ200 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
| Power Dissipation (Max) | 550W (Tc) |
| Supplier Device Package | TO-3P |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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