IXTA1R6N100D2
IXYS
Product No:
IXTA1R6N100D2
Manufacturer:
Package:
TO-263AA
Batch:
-
Datasheet:
Description:
MOSFET N-CH 1000V 1.6A TO263
Quantity:
In Stock : 150
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.9545
10
2.6524
100
2.17303
500
1.84984
1000
1.560109
2000
1.482104
5000
1.426387
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Product Information
Parameter Info
User Guide
| Mfr | IXYS |
| Series | Depletion |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Depletion Mode |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | - |
| Base Product Number | IXTA1 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 800mA, 0V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | TO-263AA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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