IRFBE30PBF
Vishay Siliconix
Product No:
IRFBE30PBF
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
Description:
MOSFET N-CH 800V 4.1A TO220AB
Quantity:
In Stock : 1017
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.052
10
1.8449
100
1.48314
500
1.218546
1000
1.00965
2000
0.940016
5000
0.905198
10000
0.87039
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRFBE30 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2.5A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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