IRFB4110PBF
Infineon Technologies
Product No:
IRFB4110PBF
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 120A TO220AB
Quantity:
In Stock : 6339
Minimum: 1 Multiples: 1
Qty
Unit Price
1
4.123
10
3.70215
100
3.03335
500
2.582195
1000
2.177761
2000
2.068872
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRFB4110 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| Power Dissipation (Max) | 370W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9620 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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