IRF200B211
Infineon Technologies
Product No:
IRF200B211
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 200V 12A TO220AB
Quantity:
In Stock : 34
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.007
10
0.8968
100
0.699105
500
0.577543
1000
0.455952
2000
0.425562
5000
0.404282
10000
0.389082
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | HEXFET®, StrongIRFET™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Base Product Number | IRF200 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.2A, 10V |
| Power Dissipation (Max) | 80W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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30,000,000Standard Product Unit
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