IPP65R190E6XKSA1
Infineon Technologies
Product No:
IPP65R190E6XKSA1
Manufacturer:
Package:
PG-TO220-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 20.2A TO220-3
Quantity:
In Stock : 80
Minimum: 1 Multiples: 1
Qty
Unit Price
1
3.686
10
3.30695
100
2.70959
500
2.306657
1000
1.945362
2000
1.848102
5000
1.778618
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Base Product Number | IPP65R190 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Power Dissipation (Max) | 151W (Tc) |
| Supplier Device Package | PG-TO220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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