Home / Single FETs, MOSFETs / IPP65R090CFD7XKSA1

IPP65R090CFD7XKSA1

Infineon Technologies

Product No:

IPP65R090CFD7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

In Stock : 479

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    5.8235

  • 10

    4.9932

  • 100

    4.160905

  • 500

    3.671389

  • 1000

    3.304242

  • 2000

    3.096202

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03

Product Information

Parameter Info
User Guide
Mfr Infineon Technologies
Series CoolMOS™ CFD7
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Base Product Number IPP65R
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 90mOhm @ 12.5A, 10V
Power Dissipation (Max) 127W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)