Infineon Technologies
Product No:
IPD60R1K5CEAUMA1
Manufacturer:
Package:
PG-TO252-3
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 600V 5A TO252
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.665
10
0.57285
100
0.396625
500
0.33136
1000
0.282017
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| Mfr | Infineon Technologies |
| Series | CoolMOS™ CE |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Base Product Number | IPD60R |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| Power Dissipation (Max) | 49W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |