IMW65R048M1HXKSA1
Infineon Technologies
Product No:
IMW65R048M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Batch:
-
Datasheet:
-
Description:
MOSFET 650V NCH SIC TRENCH
Quantity:
In Stock : 1495
Minimum: 1 Multiples: 1
Qty
Unit Price
1
14.7535
10
12.99315
100
11.23717
500
10.183715
1000
9.340922
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Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | CoolSIC™ M1 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +23V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Base Product Number | IMW65R048 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | PG-TO247-3-41 |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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