HER308G

Taiwan Semiconductor Corporation

Product No:

HER308G

Package:

DO-201AD

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 1KV 3A DO201AD

Quantity:

In Stock : 4726

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.57

  • 10

    0.49115

  • 100

    0.339815

  • 500

    0.283936

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Product Information

Parameter Info
User Guide
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Cut Tape (CT)
Technology Standard
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Product Status Active
Base Product Number HER308
Capacitance @ Vr, F 35pF @ 4V, 1MHz
Supplier Device Package DO-201AD
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 3A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A