GT50JR21(STA1,E,S)
Toshiba Semiconductor and Storage
Product No:
GT50JR21(STA1,E,S)
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
PB-F IGBT / TRANSISTOR TO-3PN(OS
Quantity:
In Stock : 23
Minimum: 1 Multiples: 1
Qty
Unit Price
1
4.465
10
3.7487
100
3.03278
500
2.695815
1000
2.308291
2000
2.173496
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| IGBT Type | - |
| Input Type | Standard |
| Power - Max | 230 W |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Product Status | Active |
| Test Condition | - |
| Switching Energy | - |
| Td (on/off) @ 25°C | - |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-3P(N) |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
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15,000 ㎡In-stock Warehouse
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