FQT4N25TF
Fairchild Semiconductor
Product No:
FQT4N25TF
Manufacturer:
Package:
SOT-223-4
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 0
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
User Guide
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 415mA, 10V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Supplier Device Package | SOT-223-4 |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 830mA (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
