Diodes Incorporated
Product No:
DMN10H170SFG-13
Manufacturer:
Package:
PowerDI3333-8
Batch:
-
Description:
MOSFET N-CH 100V PWRDI3333
Quantity:
Minimum: 1 Multiples: 1
Qty
Unit Price
1
0.551
10
0.47215
25
0.4408
100
0.352735
250
0.32756
500
0.277153
1000
0.214168
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| Mfr | Diodes Incorporated | 
| Series | - | 
| Package | Tape & Reel (TR) | 
| FET Type | N-Channel | 
| Vgs (Max) | ±20V | 
| Technology | MOSFET (Metal Oxide) | 
| FET Feature | - | 
| Mounting Type | Surface Mount | 
| Package / Case | 8-PowerVDFN | 
| Product Status | Active | 
| Vgs(th) (Max) @ Id | 3V @ 250µA | 
| Base Product Number | DMN10 | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Rds On (Max) @ Id, Vgs | 122mOhm @ 3.3A, 10V | 
| Power Dissipation (Max) | 940mW (Ta) | 
| Supplier Device Package | PowerDI3333-8 | 
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 10 V | 
| Drain to Source Voltage (Vdss) | 100 V | 
| Input Capacitance (Ciss) (Max) @ Vds | 870.7 pF @ 25 V | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 8.5A (Tc) |