BUK6E2R0-30C127
NXP USA Inc.
Product No:
BUK6E2R0-30C127
Manufacturer:
Package:
I2PAK
Batch:
-
Datasheet:
Description:
N-CHANNEL POWER MOSFET
Quantity:
In Stock : 4728
Minimum: 1 Multiples: 1
Qty
Unit Price
329
0.8645
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Product Information
Parameter Info
User Guide
| Mfr | NXP USA Inc. |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
| Power Dissipation (Max) | 306W (Tc) |
| Supplier Device Package | I2PAK |
| Gate Charge (Qg) (Max) @ Vgs | 229 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14964 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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