XPN9R614MC,L1XHQ
Toshiba Semiconductor and Storage
型号:
XPN9R614MC,L1XHQ
封装:
8-TSON Advance-WF (3.1x3.1)
批次:
-
数据手册:
-
描述:
MOSFET P-CH 40V 40A 8TSON
购买数量:
库存 : 13766
最小起订量: 1 最小递增量: 1
数量
单价
1
1.2825
10
1.0469
100
0.814055
500
0.690004
1000
0.562077
2000
0.529131
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101, U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 500µA |
| Base Product Number | XPN9R614 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
| Power Dissipation (Max) | 840mW (Ta), 100W (Tc) |
| Supplier Device Package | 8-TSON Advance-WF (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
2000+日均询价数量
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15,000 ㎡库存仓库
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