XPN12006NC,L1XHQ

Toshiba Semiconductor and Storage

型号:

XPN12006NC,L1XHQ

封装:

8-TSON Advance-WF (3.1x3.1)

批次:

-

数据手册:

描述:

MOSFET N-CH 60V 20A 8TSON

购买数量:

库存 : 10000

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.121

  • 10

    0.9196

  • 100

    0.71535

  • 500

    0.606309

  • 1000

    0.493905

  • 2000

    0.464949

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 200µA
Base Product Number XPN12006
Operating Temperature -55°C ~ 175°C
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Power Dissipation (Max) 65W (Tc)
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 20A