XP10NA011J
XSemi Corporation
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产品信息
参数信息
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| Mfr | XSemi Corporation |
| Series | XS10NA011 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
| Power Dissipation (Max) | 1.13W (Ta), 50W (Tc) |
| Supplier Device Package | TO-251S |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2288 pF @ 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 48.5A (Tc) |
2000+日均询价数量
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2800+全球品牌
15,000 ㎡库存仓库
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