XK1R9F10QB,LXGQ

Toshiba Semiconductor and Storage

型号:

XK1R9F10QB,LXGQ

品牌:

封装:

TO-220SM(W)

批次:

数据手册:

描述:

MOSFET N-CH 100V 160A TO220SM

购买数量:

库存 : 请查询

请发送RFQ，我们将立即回复。

联系人姓名

电子邮箱

公司名称

国家

购买数量

参数信息

用户指南

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Base Product Number	XK1R9F10
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	1.92mOhm @ 80A, 10V
Power Dissipation (Max)	375W (Tc)
Supplier Device Package	TO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs	184 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	11500 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	160A (Ta)