WNSC12650T6J
WeEn Semiconductors
型号:
WNSC12650T6J
封装:
5-DFN (8x8)
批次:
-
数据手册:
描述:
DIODE SIL CARBIDE 650V 12A 5DFN
购买数量:
库存 : 2998
最小起订量: 1 最小递增量: 1
数量
单价
1
3.2965
10
2.77115
100
2.24181
500
1.992682
1000
1.706238
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | WeEn Semiconductors |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Product Status | Obsolete |
| Base Product Number | WNSC1 |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Supplier Device Package | 5-DFN (8x8) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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