VWM200-01P
IXYS
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产品信息
参数信息
用户指南
| Mfr | IXYS |
| Series | - |
| Package | Box |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | - |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Mounting Type | Chassis Mount |
| Package / Case | V2-PAK |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Base Product Number | VWM200 |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 100A, 10V |
| Supplier Device Package | V2-PAK |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | 210A |
2000+日均询价数量
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2800+全球品牌
15,000 ㎡库存仓库
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