VS-3C04ET07T-M3
Vishay General Semiconductor - Diodes Division
型号:
VS-3C04ET07T-M3
封装:
TO-220AC
批次:
-
数据手册:
描述:
650 V POWER SIC GEN 3 MERGED PIN
购买数量:
库存 : 1983
最小起订量: 1 最小递增量: 1
数量
单价
1
2.223
10
1.84775
100
1.4706
500
1.244367
1000
1.05583
2000
1.003048
5000
0.965333
10000
0.933375
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产品信息
参数信息
用户指南
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 175pF @ 1V, 1MHz |
| Supplier Device Package | TO-220AC |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |
2000+日均询价数量
30,000,000标准产品数量
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15,000 ㎡库存仓库
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