TSM10N60CI C0

Taiwan Semiconductor Corporation

型号:

TSM10N60CI C0

封装:

ITO-220

批次:

-

数据手册:

描述:

MOSFET N-CH 600V 10A ITO220

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Taiwan Semiconductor Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V
Power Dissipation (Max) 50W (Tc)
Supplier Device Package ITO-220
Gate Charge (Qg) (Max) @ Vgs 45.8 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1738 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)