TRS8E65C,S1Q
Toshiba Semiconductor and Storage
型号:
TRS8E65C,S1Q
封装:
TO-220-2L
批次:
-
数据手册:
-
描述:
DIODE SIL CARB 650V 8A TO220-2L
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Obsolete |
| Base Product Number | TRS8E65 |
| Capacitance @ Vr, F | 44pF @ 650V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
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