TRS4E65H,S1Q
Toshiba Semiconductor and Storage
型号:
TRS4E65H,S1Q
封装:
TO-220-2L
批次:
-
数据手册:
-
描述:
G3 SIC-SBD 650V 4A TO-220-2L
购买数量:
库存 : 400
最小起订量: 1 最小递增量: 1
数量
单价
1
1.7575
10
1.4573
100
1.160045
500
0.981578
1000
0.832846
2000
0.791208
5000
0.761463
10000
0.73625
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 263pF @ 1V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
