TRS12N65FB,S1Q
Toshiba Semiconductor and Storage
型号:
TRS12N65FB,S1Q
封装:
TO-247
批次:
-
数据手册:
-
描述:
SIC SBD TO-247 V=650 IF=12A
购买数量:
库存 : 55
最小起订量: 1 最小递增量: 1
数量
单价
1
4.617
10
3.87885
100
3.138135
500
2.789466
1000
2.388471
2000
2.249002
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Base Product Number | TRS12N65 |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Current - Average Rectified (Io) (per Diode) | 6A (DC) |
2000+日均询价数量
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15,000 ㎡库存仓库
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