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TRS12N65FB,S1F(S

Toshiba Semiconductor and Storage

型号:

TRS12N65FB,S1F(S

封装:

TO-247

批次:

-

数据手册:

-

描述:

DODE SCHOTTKY 650V TO247

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Base Product Number TRS12N65
Diode Configuration 1 Pair Common Cathode
Supplier Device Package TO-247
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
Current - Average Rectified (Io) (per Diode) 6A (DC)