TRS12A65F,S1Q

Toshiba Semiconductor and Storage

型号:

TRS12A65F,S1Q

封装:

TO-220F-2L

批次:

-

数据手册:

-

描述:

DIODE SIL CARB 650V 12A TO220F

购买数量:

库存 : 28

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    5.111

  • 10

    4.29115

  • 100

    3.47149

  • 500

    3.085752

  • 1000

    2.642178

  • 2000

    2.487888

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Product Status Active
Base Product Number TRS12A65
Capacitance @ Vr, F 44pF @ 650V, 1MHz
Supplier Device Package TO-220F-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 12 A