TPWR8503NL,L1Q

Toshiba Semiconductor and Storage

型号:

TPWR8503NL,L1Q

封装:

8-DSOP Advance

批次:

-

数据手册:

-

描述:

MOSFET N-CH 30V 150A 8DSOP

购买数量:

库存 : 4927

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.5175

  • 10

    2.26575

  • 100

    1.82096

  • 500

    1.496098

  • 1000

    1.239626

  • 2000

    1.154136

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 1mA
Base Product Number TPWR8503
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 0.85mOhm @ 50A, 10V
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Supplier Device Package 8-DSOP Advance
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)