TPW2R508NH,L1Q

Toshiba Semiconductor and Storage

型号:

TPW2R508NH,L1Q

品牌:

封装:

8-DSOP Advance

批次:

数据手册:

描述:

PB-F POWER MOSFET TRANSISTOR DOS

购买数量:

库存 : 1735

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	2.5mOhm @ 50A, 10V
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Supplier Device Package	8-DSOP Advance
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Drain to Source Voltage (Vdss)	75 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 37.5 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	150A (Ta)