TPW1R306PL,L1Q
Toshiba Semiconductor and Storage
型号:
TPW1R306PL,L1Q
封装:
8-DSOP Advance
批次:
-
数据手册:
-
描述:
MOSFET N-CH 60V 260A 8DSOP
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Base Product Number | TPW1R306 |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 1.29mOhm @ 50A, 10V |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
| Supplier Device Package | 8-DSOP Advance |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8100 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
2000+日均询价数量
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2800+全球品牌
15,000 ㎡库存仓库
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