TPS1120DR
Texas Instruments
型号:
TPS1120DR
封装:
8-SOIC
批次:
-
数据手册:
-
描述:
MOSFET 2P-CH 15V 1.17A 8-SOIC
购买数量:
库存 : 769
最小起订量: 1 最小递增量: 1
数量
单价
1
1.919
10
1.72615
100
1.387665
500
1.140133
1000
0.94468
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产品信息
参数信息
用户指南
| Mfr | Texas Instruments |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 840mW |
| Configuration | 2 P-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Base Product Number | TPS1120 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 5.45nC @ 10V |
| Drain to Source Voltage (Vdss) | 15V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | 1.17A |
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