TPS1100DR

Texas Instruments

型号:

TPS1100DR

封装:

8-SOIC

批次:

-

数据手册:

-

描述:

MOSFET P-CH 15V 1.6A 8SOIC

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Texas Instruments
Series -
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +2V, -15V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Base Product Number TPS1100
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
Power Dissipation (Max) 791mW (Ta)
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 5.45 nC @ 10 V
Drain to Source Voltage (Vdss) 15 V
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)