TPN4R712MD,L1Q
Toshiba Semiconductor and Storage
型号:
TPN4R712MD,L1Q
封装:
8-TSON Advance (3.1x3.1)
批次:
-
数据手册:
-
描述:
MOSFET P-CH 20V 36A 8TSON
购买数量:
库存 : 2947
最小起订量: 1 最小递增量: 1
数量
单价
1
0.7695
10
0.68115
100
0.52193
500
0.412585
1000
0.330068
2000
0.299126
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产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Base Product Number | TPN4R712 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V |
| Power Dissipation (Max) | 42W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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