TPN3300ANH,LQ

Toshiba Semiconductor and Storage

型号:

TPN3300ANH,LQ

封装:

8-TSON Advance (3.3x3.3)

批次:

-

数据手册:

-

描述:

MOSFET N-CH 100V 9.4A 8TSON

购买数量:

库存 : 6884

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.817

  • 10

    0.7334

  • 100

    0.571615

  • 500

    0.472169

  • 1000

    0.372761

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产品信息

参数信息
用户指南
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 100µA
Base Product Number TPN3300
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 33mOhm @ 4.7A, 10V
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)